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2 edition of Effect of minor impurities on the electrical properties of Se and Se containing glasses found in the catalog.

Effect of minor impurities on the electrical properties of Se and Se containing glasses

M. A. C. Assunc В·ao

Effect of minor impurities on the electrical properties of Se and Se containing glasses

by M. A. C. Assunc В·ao

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  • 18 Currently reading

Published by typescript in [s.l.] .
Written in English


Edition Notes

Thesis (Ph.D.) - University of Warwick, 1985.

Statementby M.A.C. Assunc ·ao.
ID Numbers
Open LibraryOL13863390M

Effect of Ni impurities on the optical properties of YBa2Cu3O61y C. C. Homes* Department of Physics, Brookhaven National Laboratory, Upton, New York D. A. Bonn, Ruixing Liang, and W. N. Hardy Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia, Canada V6T 1Z1 D. N. Basov. The effects of ternary impurities on order-disorder phase transformation temperature and the characteristics of atomic short-range order in Fe-Al type intermetallics have been calculated. Impurity elements in Fe{sub }(Al{sub 1{minus}n}X{sub n}){sub } where X = Ni, Co, Mn, Cr, Ti, Si, Zr, Hf, Nb, Ta, Re, Mo or W, are considered up to 1 at.

Optical, structural and electrical properties of zinc sulphide vacuum evaporated thin film Pawan Kumar 1, Aravind Kumar, P N Dixit 2 & T P Sharma3 1Department of Physics S C R I E T, C C S University, Meerut 2National Physical Laboratory, Dr K S Krishnan Marg, New Delhi 3Department of Physics, University of Rajasthan, Jaipur Boron is a chemical element with the symbol B and atomic number 5. Produced entirely by cosmic ray spallation and supernovae and not by stellar nucleosynthesis, it is a low-abundance element in the Solar System and in the Earth's crust. Boron is concentrated on Earth by the water-solubility of its more common naturally occurring compounds, the borate opes: α-, β-rhombohedral, β-tetragonal (and more).

Characterization of the electrical and optical properties of the CrNxOy and AlNxOy thin films Acknowledgements Every investigation becomes feasible at the expense of the collaboration of various people, and I can only thank the people for their collaboration, intervention or . Fabrication and properties of novel low-melting glasses in the ternary system ZnO–Sb 2O 3–P 2O 5 Bing Zhanga, Qi Chena,b,*, Li Songb, Huiping Lib, Fengzhen Houb, Jinchao Zhangb aKey Laboratory for Ultrafine Materials of Ministry of Education, East China University of Science and Technology, Shanghai , China b Department of Inorganic Materials, East China University of Science and.


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Effect of minor impurities on the electrical properties of Se and Se containing glasses by M. A. C. Assunc В·ao Download PDF EPUB FB2

Effect of Cd and Pb impurities on the optical properties of fresh evaporated amorphous (As 2 Se 3) 90 Ge 10 thin films Article (PDF Available) in Applied Physics B 95(2) May with.

range 15 m, the S or Se atoms, which cause far-IR absorption due to As–S or As–Se bond vibration, can be replaced by heavier counterparts such as Te or transition met-als. Chalcogenide glasses containing metal atoms have opti-cal and electronic properties which are different from those of the ordinary chalcogenide glasses.

The dc and ac conductivities of glasses of the system Ge Sb Se (with the general formula Ge x Sb 10 Se 90−x have been studied. The dc conductivity results indicate a maximum in the glass transition temperature and activation energy and a minimum in conductivity for the composition Ge 25 Sb 10 Se These results have been explained on the basis of the prevalent structural arrangement wherein Cited by: The Ag‐deposited Se 80 Ge 20 (at.

%) amorphous films are found to show a large chemical shift (∼ eV) in the Se 3d level toward lower binding energies and to form a Ag 2 Se phase on the. The effect of Sb alloying on the electrographic properties of a-Se and laser induced amorphous to crystalline phase transition in glassy Se −x Sb x alloys is reported by Mikla et al.

The thermal stability, carrier drift mobilities and optical properties in thin films of Se–Sb alloys have been investigated by various authors [13], [14].Cited by: comparative study on optical properties of Se–Zn–In and Se–Zn–Te–In In this order, to see the effect of fixed amount of Te and variable it found to be higher for Te containing Se–Zn–In glasses at compositional/or structural unit threshold value.

Optical energy band gap. Chapter 3 Electrical switching behaviour of bulk In-Se-Tl 69 The present work deals with the effect of composition, sample thickness (t) and temperature on the electrical switching behavior of bulk In 10Se xTl x (7 ≤x ≤15) and In 15Se xTl x (2≤x≤10) glasses are.

THE EFFECT OF SELECTED IMPURITIES ON SOME OPTICAL PROPERTIES OF SILICON. Iowa State University of Science and Technology, Ph.D., Engineering, electrical Physics, solid state University Microfilms, Inc., Ann Arbor, Michigan. Fundamental physical properties of Cu-As-Se glasses along Cu-As2Se3 tie lines have been investigated in order to obtain information on electronic structure.

Progressive Cu addition to As2Se3 induces gradual red shift of the absorption edge and significantly reduces the value of Author: V. Mikla, A. Kikineshi, V. Mikla, D. Semak. In this paper, for the first time, the effect of both the solvents and the thickness was investigated on the structural, optical and electrical properties of the ITO films that were synthesized by the sol–gel spin-coating processes with In(NO 3) 3 H 2 O and SnCl 4 as indium and tin precursors, respectively.

Polyvinylalcohol (PVA) was used Author: Mohsen Moradi-Haji. In the present study, the structural and opto-mechanical properties of Ge–Sb–As–Se–S chalcogenide glasses have been investigated.

For this purpose, different bulk glasses of Ge20Sb5As15Se60−xSx (0 ≤ x≤50) were prepared by conventional melt quenching technique in quartz ampoule and different characteristics of prepared glasses such as glass transition temperature, Cited by: 3.

glasses containing more than 20% of V 2O 5, the VO 4 and VO 5 structural units with V–O–V bridges were formed in the glass network. Gouda et al [16] have investigated the effect of replacing vanadium by Cu2+ ion on the dc-electrical conductivity (σ) and I–V characteristics of (V.

transitional metal ions, such as MnO in glasses, leads to a change in glass structure, electrical, optical and magnetic properties [].

In addition, the MnO-containing phosphate glasses, incorporating of monovalent alkali metal cations (Li+, Na+, K+), are interesting in connection with the ionic conductivity []. Dielectric properties of.

A semiconductor material has an electrical conductivity value falling between that of a conductor, such as metallic copper, and an insulator, such as resistance falls as its temperature rises; metals are the opposite.

Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal two differently-doped regions exist in the.

Abstract: A series of Ge 3 Se 5 Te 2 Sn x (x=0,mol%) chalcogenide glasses were prepared by traditional melt-quenching method. The physiochemical properties and structure changes of glasses were characterized by employing the techniques of X-ray diffraction (XRD), differential scanning calorimetry (DSC), visible-near IR spectrum, Fourier transform infrared spectrum.

earlier reports on copper- phosphate glasses containing chlorine, nevertheless presented problem of interpretation. As the BaCI2 content was increased, the electrical conductivity and concentration of the paramagnetic ions decreased steadly up to about 7mole% but with.

Indium tin oxide thin film (ITO film) has been deposited onto the quartz glass by a sol-gel process, followed by annealing in air. The temperature range from to °C and the annealing effect on the optical, electrical and structural properties of ITO films has been studied in detail. ITO Films with a thickness of nm had an optical transparency up to 90% in the wavelength range of Author: Jing Li, Xiao Dong Zhao.

effect dependence of the conductivity of chalcogenide glasses [14, 15]. The aim of this paper is to report some electrical features, and determine the influence of Antimony (Sb) content on the electrical conductivity of the Se-In-Sb system and characterize its dependence on temperature.

contribution the effect of each precursor used for the deposition by spray-pyrolysis, will be explored and their role in determining the optical and electrical properties of Cr 2 O 3 will be outlined.

A correlation between the structural, electrical, and optical properties upon introducing nitrogen precursors has been established. In particular it. Measuring impurities - rounding The limit is the peak area of the standard; if a numerical limit is given in parentheses, it is only an approximate limit, for information.

Where a numerical limit is specified as the primary decision criterion, the calculated result of the test is first rounded to the number of significant figures given in. Effect of Dopant Concentration on Electrical and Optical Properties of Sn-Doped ZnO Thin Films Deposited by Sol-Gel Immersion Method p Effect of Various Tin Doping Percentages on the Electrical and Structural Properties of Nanostructured Zinc Oxide Thin Films Deposited Using Sol-Gel Immersion Method for Gas Sensing ApplicationAuthor: Shafura Karim, Uzer Mohd Noor, Mohamad Hafiz Mamat, Shuhaimi Abu Bakar, Salman A.H.

Alrokayan, Hasee.morphology) greatly affects the optical and electrical properties of the film and, eventually, the photovoltaic properties of the cell. Therefore, the present investigation is aimed to reveal co-relation of ZnO films’ optical properties with electrical resistances, which are prepared by a simple and low cost homemade sprayCited by: 1.studies in the glassy phase.

These glasses represent potential canadidates for energy storage devices and solid state batteries (Chowdari et al., ; Funke, ). So far, the main concern has been focused on electrical properties. It is assumed that such investigation is File Size: KB.